Characterization of a complementary m&al-oxide operational amplifier from 300 to 4.2 K semiconductor

We report the first operation of a commercially available complementary metal-oxide semiconductor operational amplifier, .& liquid helium temperatuie. In addition, we have characterized several factors important to the practical application of such a circuit from room temperature down to 4.2 K. The temperature dependence and measurement techniques for -open-loop gain, input offset voltage, input referred noise voltage, and -quiescent current are presented. We will discuss our observations of low temperature behavior of the opamp with respect to others’ previous results. This work represents an advancement over earlier studies which only reported opamp operation down to 77 or 30 K with measurements taken only at a limited number of temperatures instead of a broad range. Our data suggest that under special operating conditions the opamps can be effectively used with careful consideration of noise and gain performance. Input offs& voltage levels and quiescent current (including power consumption) resemble. normal room temperature operation.